Magnetic and Spintronic Materials

Magnetic and Spintronic Materials

Magnetic and spintronic materials are pivotal in advancing technology, particularly in data storage, processing, and electronic devices. Magnetic materials, which include ferromagnets, antiferromagnets, and ferrimagnets, exhibit properties that allow them to be magnetized and retain their magnetization, making them essential for applications such as hard drives, magnetic sensors, and transformers. For example, materials like cobalt and iron, when combined with other elements, can be engineered to achieve specific magnetic properties that enhance the performance of magnetic devices. Spintronics, or spin electronics, represents a revolutionary approach that utilizes the intrinsic spin of electrons, in addition to their charge, to store and process information. Unlike traditional electronic devices that rely solely on the movement of electrical charge, spintronic devices harness the magnetic moment associated with electron spin, leading to faster and more energy-efficient data processing. Spintronic materials, such as magnetic semiconductors and topological insulators, allow for the manipulation of spin states, enabling applications in non-volatile memory technologies like spin-transfer torque magnetic random-access memory (STT-MRAM). This type of memory is characterized by its high speed and low power consumption, making it a promising alternative to conventional RAM and flash storage. Research in this field is also focused on enhancing the performance of magnetic and spintronic materials through nanostructuring and heterostructures, which can lead to improved magnetic properties and spin transport efficiencies. In summary, magnetic and spintronic materials are essential to the evolution of modern electronics, offering the potential for faster, more efficient, and energy-saving technologies. As research continues to uncover new materials and methods for manipulating electron spin, the future of computing and data storage promises to be transformed, leading to innovations that will shape the technological landscape for years to come.

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Committee Members

Prof. Dr.-Ing
Frank Muecklich

Saarland University, Germany

Professor. Dr
Maria Visa

Transilvania University of Brasov, Romania

Professor Emeritus
Vladimir G. Chigrinov

Hong Kong University of Science and Technology, Hong Kong

Professor
Thomas J. Webster

Hebei University of Technology, China

M-Nano 2025 Speakers

Professor Emeritus
Osman Adiguzel

Firat University, Turkey

Professor
Paulo Cesar De Morais

Catholic University of Brasilia, Brazil

Senior Scientist
Oleg Dimitriev

V.Lashkaryov Institute of Semiconductor Physics, Ukraine

Chief Scientific Officer
Mitra Mosharraf

HTD Biosystems, United States

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