Title : Magnetotransport in metallic n-type InP at low temperatures

We investigate the electronic transport properties of metallic n-type indium phosphide (n-InP). At low temperatures, the electrical conductivity follows the relationship ????(T ) = ????(T = 0) + mT^½. We demonstrate that the thermal coefficient m undergoes a sign reversal with increasing magnetic field. To elucidate the physical origin of this behavior, we examine theoretical framework incorporating the Zeeman effect, weak localization, and electron-electron interaction (EEI) effects.

Keywords: Metal-insulator transition; low temperatures; strong magnetic fields; low localization effect; electronelectron interaction effects; metallic electrical conductivity; coefficient of thermal variation

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