High-Performance Flexible Photodetectors Based on III–V Semiconductor–Polymer Hybrid Nanocomposites

Flexible and lightweight photodetectors are increasingly important for next-generation optoelectronic systems, wearable sensing platforms, and portable imaging technologies. Hybrid materials that combine the superior electronic properties of inorganic semiconductors with the mechanical flexibility of polymers provide an attractive approach for developing high-performance photodetector devices. In this study, we report the design, fabrication, and characterization of flexible photodetectors based on III–V semiconductor–polymer hybrid nanocomposites.

The proposed hybrid system incorporates indium phosphide (InP) and gallium arsenide (GaAs) nanoparticles dispersed within a polythiophene-derived conductive polymer matrix. The nanocomposite films were synthesized using a solution-blending method followed by spin-coating to form uniform thin films with controlled nanoparticle dispersion. This fabrication approach promotes strong interfacial interactions between the inorganic nanoparticles and the polymer host, which play a crucial role in enhancing charge transport and photoresponse characteristics.

Structural and morphological properties of the nanocomposite films were examined using scanning electron microscopy (SEM), confirming homogeneous distribution of semiconductor nanoparticles throughout the polymer matrix. Optical characterization using UV–Vis spectroscopy revealed improved light absorption across the visible and near-infrared spectral regions due to the synergistic interaction between the polymer and III–V nanostructures. Electrical and photoconductive performance were evaluated through current–voltage (I–V) measurements under both dark and illuminated conditions. The hybrid photodetectors exhibit significantly enhanced photocurrent generation, high on/off ratios, and rapid photoresponse behavior under visible and near-infrared illumination, indicating efficient charge carrier generation and transport across the organic–inorganic interface.

In addition, the fabricated devices demonstrate good thermal stability and environmental robustness, which are essential for practical flexible and wearable optoelectronic applications. The results highlight the potential of III–V semiconductor–polymer hybrid nanocomposites as multifunctional materials for high-performance flexible photodetectors. Furthermore, this study provides valuable insights into interface engineering strategies for optimizing charge transfer processes in organic–inorganic hybrid optoelectronic systems.

Keywords: III–V Semiconductor Nanoparticles; Polymer Nanocomposites; Flexible Photodetectors; Indium Phosphide (InP); Gallium Arsenide (GaAs); Photoconductivity; Organic–Inorganic Hybrid Materials.
 

Dr. Yashu Swami is a Professor in the Department of ECE at Manav Rachna International Institute of Research and Studies, Faridabad, India and a Postdoctoral Researcher at the EE Department, IIT Ropar. With a Ph.D. in Nanoelectronics (MNNIT Allahabad, India). He brings over 15 years of academic, research, and industry experience. His expertise spans VLSI, AI integration, and nanoelectronics. Known for leadership, adaptability, and innovative thinking, Dr. Swami is passionate about interdisciplinary collaboration, academic mentorship, and contributing meaningfully to technological advancement.