Theoretical insights into epitaxial graphene grown on SiC

In his own work, the crystal structure and the electronic structure properties of epitaxial graphene grown on SiC substrate have been explored based on first-principles calculations. It is found that the quality of graphene grown on C-face of SiC substrate is perfect, which still retains the properties of isolated graphene. Not only the carriers’ doping profile of the single-layer graphene, but also the energy band structure have been determined. Then, the relationship between this doping profile and the interface structure has been investigated. In view of the existence of the band-gap in the band structure of epitaxial graphene layers, the origin of this band-gap has also been analyzed and discussed.

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