Reduced graphene oxide as a gateway to next-generation nanoelectronics: Insights into structure property relationships

Graphene, celebrated for its exquisite physicochemical attributes, maintains to represent a cornerstone material for the evolution of nanotechnology, in particular within the domain names of superior records processing and excessive-overall performance computing. In this paintings, we document at the synthesis of graphene via the decreased graphene oxide (rGO) pathway, a scalable and price-effective method that preserves important functionalities for technological integration. Comprehensive characterization changed into performed, encompassing electron mobility, Hall effect conduct, electric conductivity, mechanical robustness, and structural flexibility. The outcomes spotlight vital correlations between synthesis methodology and emergent residences, underscoring the material’s ability to satisfy the stringent demands of subsequent-technology electronic and optoelectronic systems. This examine not best establishes rGO as a possible path towards functional graphene but additionally offers strategic insights for the layout of gadgets with unparalleled efficiency and reliability.

Dr. Salah OUDJERTLI is a Senior Researcher Class (A) at the Research Center in Industrial Technologies in Algiers, Algeria, holding a Habilitation to Direct Research (HDR) in Materials Science. He is an active member of several research laboratories at Badji Mokhtar-Annaba University and numerous international scientific societies, including the ACS and APS. Dr. OUDJERTLI serves as a peer reviewer for prominent journals from IOPSCIENCE and AIP Publishing. His extensive research focuses on nanomaterials, ceramics, semiconductors, and 2D materials. An accomplished educator and prolific author, he has made significant contributions to the field through publications and international conference participation.